2010

“나노에 둘러싸인 하루 (A Day with Nano),” M.J. Kim, Sallim Books (http://www.sallimbooks.com), ISBN 978-89-522-1491-1 (in Korean) (2010).

“Electron Microscopy analyses of Natural and Highly Oriented Pyrolytic Graphites and the Mechanically Exfoliated Graphenes Produced from them,” S.Y. Park, H.C. Floresca, Y.J. Suh and M.J. Kim, Carbon 48, 797-804 (2010).

“Influence of Nitrogen Microwave Radicals on Sequential Plasma Activated Bonding,” M.M.R. Howlader, J.G. Wang and M.J. Kim, Materials Lett. 64, 445-448 (2010).

“A sub-micron metallic electrothermal gripper,” D. Park, A. Nallani, D.K. Cha, G. Lee, M.J. Kim, G. Skidmore, J.B. Lee and J.S. Lee, Microsyst. Technol. 16, 367-373 (2010).

“LIQUID STATE POLYDIMETHYLSILOXANE WRINKLE FORMATION”, Sang Hoon Lee, Sang Ho Lee, Jangbae Jeon, M. J. Kim, App. Num. 6699543, USPTO, USA Jan (2010)

“Liquid State Polydimethylsiloxane (PDMS) Wrinkled Metal Layer Formation Process For Various Applications”,Sang Hoon Lee, Jangbae Jeon, Sang Ho Lee, M. J. Kim,Manuscripts, Materials Research Society, April (2010)

“Synthesis of Pd-Au Bimetallic Nanocystals via Controlled Overgrowth,” B. Lim, H. Kobayashi, T. Yu, J. Wang, M.J. Kim, Z. Li, M. Rycenga and Y. Xia, J. Am. Chem. Soc. 132, 2506-2506 (2010).

“Interfacial Behavior of Surface Activated p-GaP/n-GaAs Bonded Wafers at Room Temperature,” M.M.R. Howlader, T. Suga, F. Zhang and M.J. Kim, Electrochem. Solid State Lett. 13, H61-65 (2010).

“Comprehensive Investigation of Sequential Plasma Activated Si/Si Bonded Interfaces for Nano-integration on the Wafer Scale,”M.G. Kibria, F. Zhang, T.H. Lee, M.J. Kim and M.M.R. Howlader, Nanotech. 21, 134011 (2010).

“Fabrication of Complex Three-dimensional Nano Structures Using FIB and Nano Manipulation,” J.B. Jeon, H.C. Floresca and M.J. Kim, J. Vac. Sci. Tech. B28, 549-553 (2010).

“Luminescent Gold Nanoparticles with Mixed Valence States Generated from Dissociation of Polymeric Au (I) Thiolates,” C. Zhou,Ce Sun; M. Yu; Y. Qin; J.G. Wang, M.J. Kim and J. Zheng, J. Mater. Chem. C114, 7727-7732 (2010).

“Direct Two Dimensional Electrical Measurement Using Point Probing for Doping Area Identification of Nano Device in TEM,” S.Y. Park, O. Lourie and M.J. Kim, NANO 5, 61-66 (2010).

“Effects of Al substitution on the spontaneous polarization and lattice dynamics of the PbTi1-xAlxO3,” Ce Sun, J.G. Wang, P. Hu, M.J. Kim and X. Xing, Dalton Trans. 39, 5183-5186 (2010).

“Correlation between Physical Defects and Performance in AlGaN/GaN High Electron Mobility Transistor (HEMT) Devices,” S.Y. Park, T.H. Lee and M.J. Kim, Trans. Elect. Electron. Mater. 11, 49-53 (2010) – invited article.

“Anomalous Schottky Barriers and Contact Band-to-Band Tunneling in Carbon Nanotube Transistors,” D. Perello, S.C. Lim, S.J. Chae, M.J. Kim, Y.H. Lee and M Yun, ACS Nano 4, 3103-3108 (2010).

“Sequential Plasma-Activated Bonding Mechanism of Silicon/Silicon Wafers,” M.M.R. Howlader, G. Kagami, S.H. Lee, J.G. Wang, M.J. Kim and A. Yamauchi, J. MEMS 19, 840-848 (2010).

“Hybrid Plasma Bonding for Void-Free Strong Bonded Interface of Silicon/Glass at 200°C,” M.M.R. Howlader, M.G. Kibria, F. Zhang and M.J. Kim, Talanta 82, 508-515 (2010).

“TEM Study of Stability of Inverted Photovoltaic (PV) Cells,” Y.J. Suh, S.Y. Park, T.H. Lee, W.S. Chung, K.K. Kim and M.J. Kim, Microsc. Microanal. 16 (Supple. 2), 1378-1379 (2010).

“Current Anisotropy of Carbon Nanotube Diodes: Voltage and Work Function Dependence,” D.J. Perello, S.C. Lim, S.J. Chae, I. Lee, M.J. Kim, Y.H. Lee and M. Yun, Appl. Phys. Lett. 96, 263107 (2010).

“Seed-mediated Synthesis of Pd-Rh Bimetallic Nanodendrites,” H. Kobayashi, B. Lim, J. Wang, P. Camargo, T. Yu, M.J. Kim and Y. Xia, Chem. Phys. Lett. 494, 249-254 (2010).

“Hydrogenated Amorphous Silicon Nanowire Transistors with Schottky Barrier Source/Drain Junctions,” K.D. Cantley, A. Subramaniam, R.R. Pratiwadi, H.C. Floresca, J.G. Wang, H. Stiegler, R.A. Chapman, M.J. Kim and E.M. Vogel, Appl. Phys. Lett. 97, 143509 (2010).

“Ferroelectric and Ferromagnetic Properties of Pb(Ti0.8Fe0.2)O3- Thin Film,” Ce Sun, J. Wang, H. Kang, J. Chen, M.J. Kim and X. Xing, Dalton Trans. 39, 9952-9955 (2010)

“Localized Surface Plasmon Polariton Enhanced Radiative Recommbination in Ion-implanted Silicon Emitter,” A.K. Singh, K.G. Bryczynski, F.D. McDaniel, S.Y. Park, M.J. Kim and A. Neogi, Appl. Phys. Exp. 3, 102201 (2010).

2009

“A Novel Thermally-Stable Zirconium Amidinate ALD Precursor for ZrO2 Thin Films,” B. Lee, K.J. Choi, A. Hande, M.J. Kim, R.M. Wallace, J. Kim, Y. Senzaki, D. Shenai, H. Li, M. Rousseau and J. Suydam, Microelectronic Engr. 86, 272-276 (2009).

“Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozone,” B. Lee, T.J. Park, A. Hande, M.J. Kim, R.M. Wallace, J. Kim, X. Liu, J.H. Yi, H. Li, M. Rousseau, D. Shenai and J. Suydam, Microelectronic Engr. 86, 1658-1661 (2009).

“Physical Degradation of GaN HEMT Devices under High Drain Bias Reliability Testing,” S.Y. Park, C. Floresca, U. Chowdhury, J.L. Jimenes, C. Lee, E. Beam, P. Saunier, T. Balisteri and M.J. Kim,Microelectornic Reliability 49 (2009) 478-483 (2009).

“Characterization of Organic Thin Films using TEM and FTIR Spectroscopy,” U.S. Bhansali, M.A. Quevedo-Lopez, D. Cha, H. Jia, H.N. Alshareef, M.J. Kim and B.E. Gnade, Thin Solid Films 517, 5825-5829 (2009).

“HRTEM Observation of Mechanically Exfoliated Graphene from Natural Graphite and HOPG,” S.Y. Park, Y. Shu, H. Floresca and M.J. Kim, ECS Transactions on Graphene and Emerging Materials for Post-CMOS Applications, 19, 81-85 (2009).

“Materials Science of Graphene for Novel Device Applications,” G. Lee, C. Gong, Y. Chabal, J. Kim, E. Vogel, R.M. Wallace, M.J. Kim, L. Colombo and K.J. Cho, ECS Transactions on Graphene and Emerging Materials for Post-CMOS Applications, 19. 185-199 (2009).

“Atomic Layer Deposited Al2O3 ad Gate Dielectric for Graphene-based Devices,” B. Lee, G. Mordi, T. Park, K. Cho, E. Vogel, M.J. Kim, L. Colombo, R.M. Wallace and J. Kim, ECS Transactions on Graphene and Emerging Materials for Post-CMOS Applications,19, 225-230 (2009).

“Analysis of Hopping Conduction in Semiconducting and Metallic Carbon Nanotube Devices,” D.J. Perello, W.J. Yu, D.J. Bae, S.J. Chae, M.J. Kim, Y.H. Lee and M. Yun, J. Appl. Phys. 105, 124309 (2009). – Selected for the July 6, 2009 issue of Virtual Journal of Nanoscale Science and Technology.

“Interface Characterization of Nickel Contacts to Bulk Bismuth Tellurium Selenide,” O.D. Ioyre, T.H. Lee, R.P. Gupta, J.B. White, H.N. Alshareef, M.J. Kim and B.E. Gnade, Surf. Interface Anal. 41, 440-444 (2009).

“A Direct Observation on the Structure Evolution of Memory Switching Phenomena Using In-situ TEM,” D. Cha, S.J. Ahn, S.Y. Park, H. Horii, D.H. Kim, Y.K. Kim, S.O. Park, U. In Jung, M.J. Kim and J. Kim, VLSI Dig. Tech. 2009, 204-205 (2009).

“MEMS-based Mechanically Tunable Flexible Photonic Crystals,” Y.Cui, Qi Wu, W. Park, J.B. Jeon, M.J. Kim, and J.-B. Lee, The 15thInternational Conference on Solid-State Sensors, Actuators & Microsystems (Transducers 2009), 509-512 (2009).

“A Nevel Theramlly-Stable Zirconium Amidinate ALD Precursor for ZrO2 Thin Films,” B. Lee, K.J. Choi, A. Hande, M.J. Kim, R.M. Wallace, J. Kim, Y. Senzaki, D. Shenai, H. Li, M. Rousseau and J. Suydam, Microelectronic Engr. 86, 272-276 (2009).

“Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozone,” B. Lee, T.J. Park, A. Hande, M.J. Kim, R.M. Wallace, J. Kim, X. Liu, J.H. Yi, H. Li, M. Rousseau, D. Shenai and J. Suydam, Microelectronic Engr. 86, 1658-1661 (2009).

“Physical Degradation of GaN HEMT Devices under High Drain Bias Reliability Testing,” S.Y. Park, C. Floresca, U. Chowdhury, J.L. Jimenes, C. Lee, E. Beam, P. Saunier, T. Balisteri and M.J. Kim, Microelectornic Reliability 49 (2009) 478-483 (2009).

“Characterization of Organic Thin Films using TEM and FTIR Spectroscopy,” U.S. Bhansali, M.A. Quevedo-Lopez, D. Cha, H. Jia, H.N. Alshareef, M.J. Kim and B.E. Gnade, Thin Solid Films 517, 5825-5829 (2009).

“Analysis of Hopping Conduction in Semiconducting and Metallic Carbon Nanotube Devices,” D.J. Perello, W.J. Yu, D.J. Bae, S.J. Chae, M.J. Kim, Y.H. Lee and M. Yun, J. Appl. Phys. 105, 124309 (2009). – Selected for the July 6, 2009 issue of Virtual Journal of Nanoscale Science and Technology.

“Interface Characterization of Nickel Contacts to Bulk Bismuth Tellurium Selenide,” O.D. Ioyre, T.H. Lee, R.P. Gupta, J.B. White, H.N. Alshareef, M.J. Kim and B.E. Gnade, Surf. Interface Anal. 41, 440-444 (2009).

“A Direct Observation on the Structure Evolution of Memory Switching Phenomena Using In-situ TEM,” D. Cha, S.J. Ahn, S.Y. Park, H. Horii, D.H. Kim, Y.K. Kim, S.O. Park, U. In Jung, M.J. Kim and J. Kim, VLSI Dig. Tech. 2009, 204-205 (2009).

“HRTEM Study of Lithographically Defined Silicon Nanowires,” H.C. Floresca, K. Trivedi, S.J. Kang, W. Hu and M.J. Kim, Microsc. Microanal. 15(Suppl 2), 128-129 (2009).

“In-situ Observation and Characterization of Structural Evolution in a Phase-Change Memory Device by TEM-STM,” D. Cha, S.Y. Park, S.J. Ahn, H. Horii, D.K. Kim, Y.K. Kim, S.O. Park, U.I. Jung, M.J. Kim and J. Kim, Microsc. Microanal. 15(Suppl 2), 716-717 (2009).

“High Resolution TEM and Electron Diffraction Study of Graphene Layers,” Y.J. Suh, S.Y. Park and M.J. Kim, Microsc. Microanal. 15(Suppl 2), 1168-1169 (2009).

“Functionalization of a Single TiO2 Nanotube for Bio Sensor Applications,” D. Cha, M. Lee, H. Shin, M.J. Kim and J. Kim, Microsc. Microanal. 15(Suppl 2), 1180-1181 (2009).

“Anisotropic FCC Metal Nanostructures by Kinetically Controlled Synthesis,” J. Wang, Y. Xiong, B. Lim, Y. Xia and M.J. Kim, Microsc. Microanal. 15(Suppl 2), 1202-1203 (2009).

“Amorphous Structure and Stability of Mn Implanted GeC Ferromagnetic Semiconductor,” C. Sun, H.C. Floresca, J. Wang, M. Jamil, S. Guchhait, D.A. Ferrer, S.K. Barnerjee, G. Lian, L. Colombo and M.J. Kim, Microsc. Microanal. 15(Suppl 2), 1216-1217 (2009).

“HRTEM Observation of Mechanically Exfoliated Graphene from Natural Graphite and HOPG,” S.Y. Park, Y. Shu, H. Floresca and M.J. Kim, ECS Transactions on Graphene and Emerging Materials for Post-CMOS Applications, 19, 81-85 (2009).

“Materials Science of Graphene for Novel Device Applications,” G. Lee, C. Gong, Y. Chabal, J. Kim, E. Vogel, R.M. Wallace, M.J. Kim, L. Colombo and K.J. Cho, ECS Transactions on Graphene and Emerging Materials for Post-CMOS Applications, 19. 185-199 (2009).

“Atomic Layer Deposited Al2O3 ad Gate Dielectric for Graphene-based Devices,” B. Lee, G. Mordi, T. Park, K. Cho, E. Vogel, M.J. Kim, L. Colombo, R.M. Wallace and J. Kim, ECS Transactions on Graphene and Emerging Materials for Post-CMOS Applications, 19, 225-230 (2009).

“MEMS-based Mechanically Tunable Flexible Photonic Crystals,” Y. Cui, Qi Wu, W. Park, J.B. Jeon, M.J. Kim, and J.-B. Lee, The 15th International Conference on Solid-State Sensors, Actuators & Microsystems (Transducers 2009), 509-512 (2009).

“Poole-Frenkel emission and hopping conduction in semiconducting carbon nanotube transistor,” D. Perello, W. Yu, D.J. Bae, S.J. Chae, M.J. Kim, Y.H. Lee and M. Yun,, Proceedings of the SPIE – The International Society for Optical Engineering 2009, 7399, 739907 (2009).

“Twin-Induced Growth of Pd-Pt Alloy Nanocrystals,” B. Lim, J. Wang, P.H.C. Camargo, C.M. Cobley, M.J. Kim and Y. Xia, Angew. Chem. 48, 6304-6308 (2009).

“The Focused Ion Beam Fold-Out: Sample Preparation Method for Transmission Electron Microscopy,” H.C. Floresca, J.B. Jeon, J.G. Wang and M.J. Kim, Microsc. Microanal. 15, 558-563 (2009).

“Control of Light Scattering Induced Shift in Photoluminescene from CdTe Quantum Dots Encapsulated in Poly-Acrylamide Gel Nanospheres,” A. Neogi, B. Garner, T. Cai, M.J. Kim and Z. Hu, Soft Materials 7, 232-241 (2009).

“Quantitative experimental analysis of Schottky barriers and Poole-Frenkel emission in carbon nanotube devices,” D. Perello, D.J. Bae, M.J. Kim, D.K. Cha, S.Y. Jeong, B.R. Kang, W.J. Yu, Y.H. Lee and M. Yun, IEEE Transactions on Nanotechnology 8(3). 355-360 (2009).

“Microstructure and superconductivity of Zn and Au-Sn junction nanowires,” J. Wang, M. Tian and M.J. Kim, J. Nanosci. Nanotech. 9, 946-950 (2009).

“Synthesis of isotopically-labeled graphite films by cold-wall chemical vapor deposition and electronic properties of graphene obtained from such films,” W. Cai, R.D. Piner, Y. Zhu, X. Li, Z. Tan, H.C. Floresca, C. Yang, L. Lu, M.J. Kim and R.S. Ruoff, Nano Research 2, 851-856 (2009).

“Light Scattering Induced Giand Red-Shift in Photoluminescence from CdTe Quantum Dots Encapsulated in Polyacrylamide Gel Nanospheres,” B. Garner, T. Cai, Z. Hu, M.J. Kim and A. Neogi, Appl. Phys. Exp. 2, 075001-1-3 (2009).

“Void-free filling of spin-on dielectric in 22 nm wide ultrahigh aspect ratio Si trenches,” K. Trivedi, H.C. Floresca, S. Kim, H. Kim, D. Kim, J. Kim, M.J. Kim and W. Hu, J. Vac. Sci. Tech. B 27 (6), 3145-3148 (2009).

“Role of heating on plasma-activated silicon wafers bonding,” M.M.R. Howlader, T. Suga, H. Itoh, T.H. Lee and M.J. Kim, J. Electrochem. Soc. 156(11), H846-851 (2009).

“Ultrathin SOI as a flatform for nanostructures”, H.C. Floresca, K. Trivedi, S.J. Kang, B.Y. Lee, W. Hu and M.J. Kim, Conference on Wafer Bonding for Microsystems and Wafer Level Integration 09, 115-116 (2009)

“Poly(3-hexylthiophene)-CdSe Quantum Dot Bulk Heterojunction Solar Cells: Influence of the Functional End-Group of the Polymer,” K. Palaniappan, J.W. Murphy, N. Khanam, J. Horvath, H. Alshareef, M.Quevedo-Lopez, M.C. Biewer, S.Y. Park, M.J. Kim, B.E. Gnade and M.C. Stefan, Macromolecules 42, 3845-3848 (2009).

2008

“Effects of Film Stress Modulation Using TiN Metal Gate on Stress Engineering and Its Impact on Device Characteristics in Metal Gate/High-k Dielectric SOI FinFETs,”
C.Y. Kang, J.W. Yang, J.W. Oh, R. Choi, Y.J. Suh, H.C. Floresca, J. Kim, Mo.J. Kim, B.H. Lee, H-H. Tseng and R. Jammy
IEEE Electron Dev. Lett. 29, 487-490 (2008).

“Dopant Effects on the Thermal Stability of FUSI NiSi,”
P. Zhao, M.J. Kim, B.E. Gnade and R.M. Wallace,
Microelectronic Engineering, 85, 54-60 (2008).

“Highly Reproducible Single Polyaniline Nanowire using Electrophoresis Method,”
I. Lee, H.I. Park, S.Y. Park, M.J. Kim and M. Yun,
NANO: Brief Rep. Rev. 3, 75-82 (2008). ?cover page!

“Conformal Al2O3 Dielectric Layer Deposited by Atomic Layer Deposition for Graphene-based Nanoelectronics,”
B.K. Lee, S.Y. Park, H.C. Kim, K.J. Cho, E.M. Vogel, M.J. Kim, R.M. Wallace and J. Kim,
Appl. Phy. Lett. 92, 203102 (2008).

“Microstructure and Superconductivity of Zn and Au-Sn Junction Nanowires,”
J.G. Wang, M. Tian and M.J. Kim,
J. Nanosci. Nanotech. 8, 1-5 (2008).

“New FIB Fold-out Method for TEM Cross-section Sample Preparation,”
H.C. Floresca, J.B. Jeon and M.J. Kim,
Microsc. Microanal. 14(Suppl. 2), 1006-1007 (2008).

“CNT-FET Schottky Barrier Devices Fabricated by E-Beam Lithography,”
D. Perello, M.J. Kim, S.Y. Jeong, B.R. Kang, D.J. Bae, Y.H. Lee and M. Yun,
Microsc. Microanal 14(Suppl. 2), 410-411 (2008).

“P-N Junction Observation in a Single Transistor Device by in-situ TEM Electrical Measurement,”
S.Y. Park, D.K. Cha, O. Lourie and M.J. Kim,
Microsc. Microanal. 14(Suppl. 2), 402-403 (2008).

“Characterization of Nanodevices by using in-situ TEM-STM,”
J. Kim, D.K. Cha, S.Y. Park and M.J. Kim,
Microsc. Microanal. 14(Suppl. 2), 20-21 (2008).

“TEM Observation of Crack- and Pit-shaped Defects in Electrically Degraded GaN HEMTs,”
U. Chowdhury, J.L. Jimenez, C. Lee, E. Beam, P. Saunier, T. Balkstreri, S.Y. Park, T.H. Lee, J. Wang and M.J. Kim, J. Joh and J.A. del Alamo,
IEEE Electron Device Lett. 29, 1098-1100 (2008).

“Facile Synthesis of Bimetallic Nanoplates Consisting of Pd Cores and Pt Shells through Seeded Epitaxial Growth,”
B. Lim, J. Wang, P. Camargo, M. Jiang, M.J. Kim and Y. Xia,
Nano Letters Vol. 8 2535-2540 (2008).

“Shallow Trench Isolation Liners and Their Role in Reducing Lattice Strains,”
H.C. Floresca, J.G. Wang, M.J. Kim and J.A. Smythe,
Appl. Phys. Lett. 93, 143116 (2008).

“Relevance of Thermal Mismatch in Large-Area Composite Substrates of HgCdTe Heteroepitaxy,”
R.N. Jacobs, L.A. Almeida, J. Markunas, J. Pellegrino, M. Groenert, M. Jaime-Vasquez, N. Mahadik, C. Andrews, S.B. Qadri, T. Lee and M.J. Kim,
J. Electronic Mater. 37, 1480-1487 (2008).

“Origin of Tensile Stress in the Si Substrate Induced by TiN/HfO2 Metal Gate/High-k Dielectric Gate Stack,”
J.G. Wang, J. Kim, C.Y. Kang, B.H. Lee, R. Jammy, R. Choi and M.J. Kim,
Appl. Phys. Lett. 93, 161913 (2008).

“Thermal Stability of Nitrogen in Nitrided HfSiO2/SiO2/Si(001) Ultrathin Films,”
A. Herrera-Gomez, F.S. Aguirre-Tostado, M.A. Quevedo-Lopez, P.D. Kirsch, M.J. Kim and R.M. Wallace,
J. Appl. Phys. 104, 103520 (2008).

“Comparative Study of Thermal Mismatch Effects in CdTe/Si, CdTe/Ge and CdTe/GaAs Composite Structures,”
R.N. Jacobs, L.A. Almeida, J. Makunas, J. Pellegrino, M. Groenert, M. Jaime-Vasquez, N. Mahadik, C. Andrews, S.B. Qadri, T.H. Lee and M.J. Kim,
CS MANTECH Conference, Chicago, IL,17.7 (2008).

“Physical Degradation of GaN HEMT Device Observed in TEM during Reliability Test,”
S.Y. Park, C. Floresca, M.J. Kim, U. Chowdhury, J.L. Jimenes, C. Lee, E. Beam, P. Saunier and T. Balistreri,
2008 JEDEC ROCS Workshop Proceeding, Monterey, CA, 45-54 (2008).

“Fabrication Process for Double Barrier Si-Based Quantum Well Resonant Tunneling Diodes (RTD) by UHV Wafer Bonding,”
T.H. Lee, H.C. Floresca, S.J. Kang, J.J. Shim, K.H. Song, H.B. Kang, B.Y. Lee, R.M. Wallace, B.E. Gnade and M.J. Kim,
ECS Trans. 16(8), 525-530 (2008).

“Growth and Characterization of Alternative Gate Dielectrics by Molecular-Beam Epitaxy,”
L F. Edge, W. Tian, V. Vaithyanathan, T. Heeg, D.G. Schlom, D.O. Klenov, S. Stemmer, J.G. Wang, and M.J. Kim,
ECS Trans. 16(5), 213-227 (2008).

“Nano-Manipulation and Characterization for Graphene Sheet,”
S.Y. Park and M.J. Kim,
Korean Journal of Microscopy, 38(4) Suppl. 381-382 (2008)

2007

“In-situ TEM Observation on Nanostructure Evolution During Electrical Testing,”
J. Kim, K.J. Choi, D.K. Cha, M.J. Kim, S.M. Yoon and B.G. Yu,
Non-Volatile Memory Technology Symposium 2007, NVMTS ’07, 79-81, (2007).

“Fabrication of Three-dimensional Devices with Various Nano Components Using a Combination of a FIB System and Nano Manipulation,”
J.B. Jeon, J. Lee, D.K. Cha, T.H. Lee, J. Wang and M.J. Kim,
Microsc. Microanal. 13(Suppl. 2), 1514-1515CD (2007).

“HRTEM Study on the Interface of Si-based Resonant Tunneling Diodes (RTD) by UHV Wafer Bonding Technology,”
T.H. Lee, D.K. Cha, J.G. Wang, J.B. Jeon, J. Kim, R.M. Wallace, B.E. Gnade and M.J. Kim,
Microsc. Microanal. 13(Suppl. 2), 804-805CD (2007).

“Determination of Strain in the Silicon Channel Induced by a Metal Electrode,”
H.C. Floresca, J.G. Wang, M.J. Kim, C.Y. Kang, R. Choi, S.C. Song, H.H. Tseng, B.H. Lee and R. Jammy,
Microsc. Microanal. 13(Suppl. 2), 838-839CD (2007).

“Fabrication and Characterization of Single Nanowire and Nanotube Devices,”
D.K. Cha, B. Lee, J.B. Jeon, J. Kim and M.J. Kim,
Microsc. Microanal. 13(Suppl. 2), 720-721CD (2007).

“TEM-EELS Study on the Ash Damage and Repair of Porous Low-k Films,”
J. Wang, D.K. Cha, P.M. Matz, C.E. Smith, D.W. Mueller, R.F. Reidy and M.J. Kim,
Microsc. Microanal. 13(Suppl. 2), 794-795CD (2007).

“Effects of Metal Gate-induced Strain on the Performance of Metal-oxide-semiconductor Field Effect Transistors with Titanium Nitride Gate Electrode and Hafnium Oxide Dielectric,”
C.Y. Kang, R. Choi, M.M. Hussain, J. Wang, Y.J. Suh, H.C. Floresca, M.J. Kim, J. Kim, B.H. Lee and R. Jammy,
Appl. Phys. Lett. 91, 033511-3 (2007).

” A Novel Bonding Method for Ionic Wafers,”
M.M.R. Howlader, T. Suga and M.J. Kim,
IEEE Trans. Advanced Packaging 30, 598-604 (2007).

“Synthesis of Silver Nanoplates at High Yields by Slowing Down the Polyol Reduction of Silver Nitrate with Polyacrylamide,”
Y. Xing, A.R. Siekkinen, J. Wang, Y. Yin, M.J. Kim and Y. Xia,
J. Mater. Chem. 17, 2600-2602 (2007).

“Effect of Composition on the Thermal Stability of Sputter Deposited Hafnium Aluminate and Nitrided Hafnium Aluminate Dielectrics on Si(100),”
P. Sivasubramani, J. Kim, M.J. Kim, B.E. Gnade and R.M. Wallace,
J. Appl. Phys. 101, 114108-1-4 (2007).

“Synthesis and Mechanistic Study of Palladium Nanobars and Nanorods,”
Y.J. Xiong, H.G. Cai, B.J. Wiley, J.G. Wang, M.J. Kim and Y.N. Xia,
J. Am. Chem. Soc. 129, 3665-3675 (2007).

“Microstructure Characterization for Nano-thick Ir-inserted Nickel Silicides,” O.S. Song, K. Yoon, T.H. Lee and M.J. Kim,
Kor. J. Mater. Res. 17, 125-132 (2007)

“Thermal stability studies of fully silicided NiSi on Si-oxynitride and Hf-based high-k gate stacks,”
P. Zhao, M. J. Kim, B. E. Gnade, and R. M. Wallace,
J. Appl. Phys. 101, 053504-1-6(2007).

2006

“Systematic Gate Stack Optimization to Maximize Mobility with HfSiON EOT Scaling,”
M.A. Quevedo-Lopez, P.D. Kirsch, S. Krishnan, H.N. Alshareef, J. Barnett, R. Harris, A. Neugroschel, F.S. Aguirre-Tostado, B.E. Gnade, M.J. Kim, R.M. Wallace and B.H. Lee,
EDSSDRC 2006, Proc. 36th European Solid State Devices Research Conference, 113-116 (2006)

“Mobility and Charge Trapping Comparison for Crystalline and Amorphous HfON and HfSiON Gate Dielectrics,”
P. D. Kirsch, M. A. Quevedo-Lopez, S. A. Krishnan, B. H. Lee, G. Pant, M. J. Kim, R. M. Wallace, and B. E. Gnade,
Applied Physics Letters 89, 242909 (2006).

“The Thermal Stability of Lanthanum Scandate Dielectrics on Si (100),”
P. Sivasubramani, T.H. Lee, M. J. Kim, J. Kim, B. E. Gnade, and R. M. Wallace, L. F. Edge and D. G. Schlom , F. A. Stevie, R. Garcia, Z. Zhu and D.P. Griffis,
Applied Physics Letters 89, 242907 (2006).

“Effect of Nitrogen Incorporation on the Thermal Stability of Sputter Deposited Lanthanum Aluminate Dielectrics on Si (100),”
P. Sivasubramani, J. Kim, M. J. Kim, B. E. Gnade and R. M. Wallace,
Applied Physics Letters 89, 152903 (2006).

“Deposition and Patterining of Diamond-like Carbon as Antiwear Nanoimprint Templates,”
S. Ramachandran, L. Tao, T.H. Lee, S. Sant, L.J. Overzet, M.J. Goeckner, M.J. Kim, G.S. Lee and W. Hu,
J. Vac. Sci. Tech. B24, 2993-2997 (2006).

“Micro-pinholes in Composite Coblat Nickel Silicides,”
O. Song, S.Y. Kim, J.B. Jeon and M.J. Kim,
Korean J. Mater. Res. 16(10), 1-7 (2006).

“Structure-Property relationships in ultrathin Hf-based gate dielectrics,”
M.A. Quevedo-Lopez, S. Krishnan, P.D. Kirsch, H.N. Alshareef, B.E. Gnade, M.J. Kim, B.H. Lee and R. Jammy,
Future Fab. Intl. 21, July 1 (2006).

“Sequential Plasma Activated Process for Silicon Direct Bonding,”
M.R. Howlader, H. Itoh, T. Suga and M.J. Kim,
ECS Trans. 3(6), 191-202 (2006).

“Si-based Resonant Tunneling Devices using UHV Wafer Bonding,”
M.J. Kim, T.H. Lee, J. Kim, R.M. Wallace and B.E. Gnade,
ECS Trans. 3(6), 75 (2006).

“In-situ nano fabrication and assembly by FIB/SEM with a nanomanipulator,”
J.B. Jeon, H.C. Floresca, J. Kim and M.J. Kim,
Inter. Microsc. Congress 16, 1115 (2006).

“Probing nanoscale local lattice strains in advanced Si CMOS devices,”
J. Huang, M.J. Kim, P.R. Chidambaram, R.B. Irwin, P.J. Jones, J.W. Weijtmans, E.M. Koontz, Y.G. Wang, S. Tang and R. Wise,
Appl. Phys. Lett. 89, 063114 (2006).

“Thermal stability of amorphous lanthanum scandium oxide thin film deposited on silicon by molecular-beam deposition,”
L.F. Edge, D.G. Schlom, S. Rivillon, Y.J. Chabal, M.P. Agustin, S. Stemmer, T.H. Lee, M.J. Kim, H.S. Craft, J-P. Maria, M.E. Hawley, B. Hollander, J. Schubert and K. Eisenbeiser,
Appl. Phys. Lett. 89, 062902 (2006).

“Analysis of Defects in HgCdTe and CdTe Epilayers on Si by Dual-Beam FIB,”
Taehun Lee, J. Huang, D.K. Cha, R.N. Jacobs, J.H. Dinan and M.J. Kim,
Microsc. Microanal. 12(Suppl. 2), 1274-1275CD (2006).

“Electrical characterization of a single TiO2 nanotube by using modified FIB/SEM,”
D.K. Cha, B. Lee, J. Huang, J. Kim, R.M. Walllace, B.E. Gnade and M.J. Kim,
Microsc. Microanal. 12(Suppl. 2), 1272-1273 (2006).

“Demonstration of pick and place assembly for scaled MEMS devices,”
J.B. Jeon, I. Gory, G. Skidmore, M.J. Kim and B.E. Gnade,
icrosc. Microanal. 12(Suppl. 2), 560-561CD (2006).

“A novel method for bonding of ionic wafers,”
M.R. Howlader, T. Suga, M.J. Kim, N. Itoh, J. Deen and P. Mascher,
IEEE 2006 Electronic Components and Technology Conference, 552-558 (2006).

“Probing Nanoscale Local Lattice Strains in Advanced Si CMOS Devices by CBED,”
M.J. Kim, J. Huang, P.R. Chidambaram, R. Irwin, P. Jones, J. Weijtmans, E. Koontz, Y. Wang, S. Tang and R. Wise
ECS Trans. 2, 541-547 (2006).

“Room temperature bonding of silicon and lithium niobate,”
M.M.R. Howlader, T. Suga and M.J. Kim,
Appl. Phys. Lett. 89, 031914 (2006).

“Comparison of electrical and chemical characteristics of ultrathin HfON versus HfSiON dielectrics,”
G. Pant, A. Gnade, M.J. Kim, R.M. Wallace, B.E. Gnade, M.A. Quevedo-Lopez, P.D. Kirsch, and S. Krishnan,
Appl. Phys. Lett. 89, 032904 (2006).

“Fabrication of Superconducting Transition Edge Sensor based on Mo and Au Bilayers,”
M. Yun, J. Bock, M. Keynon, C.-L. Kuo, H. Leduc, A. Turner and M.J. Kim,
Nuclear Instru. Methods Phys. Res., A 559, 462-464 (2006).

“Chemical synthesis of PEDOT nanotubes,”
X. Zhang, J.-S. Lee, G.S. Lee, D.K. Cha, M.J. Kim, D.J. Yang and S.K. Manohar,
Macromolecules 39, 470-472 (2006).

“Ni Diffusion Studies from Fully-Silicided NiSi into Si,”
P. Zhao, I. Trachtenberg, M.J. Kim, B.E. Gnade and R.M. Wallace,
Electrochem. Solid-State Lett. 9, G111-G113 (2006).

“Interaction of HfO2/SiO2/Si Structures with Deuterium Gas,”
C. Driemeir, L. Miotti, I.J.R. Baumvol, C. Radtke, E.P. Gusev, M.J. Kim and R.M. Wallace,
Appl. Phys. Lett. 88, 041918 (2006).

“Effect of Thickness on the Crystallization of Ultrathin HfSiON Gate Dielectrics,”
G. Pant, A. Gnade, M.J. Kim, R.M. Wallace, B.E. Gnade, M.A. Quevedo-Lopez and P.D. Kirsch,
Appl. Phys. Lett. 88, 032901 (2006).

“TiO2 nanofibers and core-shell structures prepared using mesoporous molecular sieves as templates,”
C. Xiong, M.J. Kim and K.J. Balkus, Jr.,
Small 2, 52-55 (2006).