2005

“Interfacial Diffusion Studies of Cu/5 nm Ru/Si Structures – Physical Vapor Deposited vs. Electrochemically Deposited Cu,” T.N. Aruhagiri, Y.B. Zhang, O. Chyan, M.J. Kim and T.Q. Hurd, J. Electrochem. Soc. 152, G808-812 (2005).

“MoXSiYNZ Metal Gate Electrode with Tunable Work Function for Advanced CMOS,”
P. Zhao, J. Kim, M.J. Kim, B.E. Gnade, and R.M. Wallace,
International Conference on Solid State Devices and Materials, Kobe, Japan, A-8-1, pp 848-849 (2005).

“High performance gate first HfSiON dielectric satisfying 45nm node requirements,”
M.A. Quevedo-Lopez, S.A. Krishnan, P.D. Krisch, H.J. Li, J.H. Sim, C. Huffman, J.J. Perterson, B.H. Lee, G. Pant, B.E. Gnade, M.J. Kim, R.M. Wallace, D. Guo, H. Bu and T.P. Ma,
200t IEEE International Electron Devices Meeting (IEDM) Technical Digest, 437-440 (2005).

“Characterization of nanoscale local lattice strains in Si CMOS by convergent beam electron diffraction,”
J. Huang, D.K. Cha, P.R. Chidambaram, R.B. Irwin, P.J. Jones and M.J. Kim,
Microsc. Microanal. 11 (Suppl2), 2084-2085 (2005).

“In-situ electrical characterization of nano-interconnect structures in the FIB,”
D.K. Cha, Y. Ai, J. Huang, T. Zheng, R.M. Wallace, B.E. Gnade and M.J. Kim,
Microsc. Microanal. 11 (Suppl2), 818-819 (2005).

“5 nm ruthenium thin film as a directly plateable copper diffusion barrier,”
T.N. Arunagiri, Y. Zhang, O. Chyan, M. El-Bouanani, M.J. Kim, K.H. Chen, C.T. Wu and L.C. Chen,
Appl. Phys. Lett. 86, 083104 (2005).

“Outdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si (001),”
P. Sibasubramani, M.J. Kim, B.E. Gnade, R.M. Wallace, L.F. Edge, D.G. Schom, H.S. Craft and J.-P. Maria,
Appl. Phys. Lett. 86, 201901 (2005).

“Activation process and bonding mechanisms of Si/LiNbO3 and LiNbO3/LiNbO3 at room temperative,”
M.R. Howlader, T. Suga and M.J. Kim,
Electrochemical Sociery Proc. Vol. 2005-06, 319-325 (2005).

“Low temperature integration of CdZnTe(211)B/Si(100) by wafer bonding,”
J. Huang, D.K. Cha, A. Kaleczyc, J.H. Dinan, R.W. Carpenter and M.J. Kim,
Electrochemical Sociery Proc. Vol. 2005-06, 218-133 (2005).

“HRTEM for nano-electronic materials research,”
M.J. Kim, R.M. Wallace and B.E. Gnade,
Characterization and Metrology for ULSI Technology, AIP Conference Proc. 788, 558-564 (2005).

“Thermal stability studies of advanced gate stack structures on Si (100),”
P. Sivasubramani, P. Zhao, J. Kim, M.J. Kim, B.E. Gnade, R.M. Wallace, L.F. Edge, D.G. Scholm, G.N. Parsons and V. Misra,J
Characterization and Metrology for ULSI Technology, AIP Conference Proc. 788, 156-160 (2005).

“Thermally stable MoXSiYNZ as a metal gate electrode for advanced CMOS devices,”
P. Zhao, J. Kim, M.J. Kim, B.E. Gnade and R.M. Wallace,
Characterization and Metrology for ULSI Technology, AIP Conference Proc. 788, 152-155 (2005).

“Dopant penetration studies through Hf silicate,”
M. Quevedo-Lopez, MR. Visokay, J.J. Chambers, M.J. Bevam, A. LiFatou, L. Colombo, M.J. Kim, B.E. Gnade and R.M. Wallace,
J. Appl. Phys. 97, 043508 (2005).

2004

“A novel methodology of tuning work function of metal gate using stacking bi-metallic layers,”
I.S. Jeon, J. Lee, P. Zhao, P. Sivasurbramani, T. Oh, H.J. Kim, D.K. Cha, J. Huang, M.J. Kim, B.E. Gnade, J. Kim and R.M. Wallace,
2004 IEEE International Electron Devices Meeting 04-303-306 (2004).

“Reinforcement mechanism for mechanically enhanced xerogel films,”
H. Dong, B.P. Gorman, Z. Zhang, R.A. Orozco-Teran, J.A. Roepsch, D.W. Mueller, M.J. Kim, and R.F. Reidy,
J. Non-crystalline Solids 350, 345-350 (2004).

“The electrical properties and stability of the hafnium silicate-Si0.8Ge0.2(100) interface,”
S. Addepalli, P. Sivasubramani, M.J. Kim, B.E. Gnade, and R.M. Wallace,
Journal of Electronic Materials 33, 1016-1021 (2004).

“Wafer level and chip size direct wafer bonding at room temperature,”
M.M.R. Howlader, T. Suga and M.J. Kim,
Electrochemical Society Proc. 2004-06, 150-160 (2004).

“Epitaxially strained SiGe process to improve mobility in the PMOS transistor,”
P.R. Chidambaram, B. Smith, L. Hall, H. Bu, S. Chakravarthi, Y. Kim, A. Samoilov, A. Kim, P. Jones, R. Irwin, M.J. Kim, C. Machala and D. Grider,
Electrochemical Society Proc. 2004-07, 123-134 (2004).

“Separation and recovery of intact gold-virus complex by agarose electrophoresis and electroelution: Application to the purification of cowpea mosaic virus and colloidal gold complex,”
C.M. Soto, A.S. Blum, C.D. Wilson, J. Lazorcik, M.J. Kim, B.E. Gnade and B.R. Ratna,
Electrophoresis 25, 2901-2906 (2004).

“Diffusion studies of copper on ruthenium thin film – A plateable copper diffusion barrier,”
R. Chan, T.N. Arunagiri, Y. Zhang, O. Chyan, R.M. Wallace, M.J. Kim, T.Q. Hurd,
Electrochemical and Solid-State Letters 7, G154-157 (2004).

“Long activity of Co-Mo:MgO catalyst for the synthesis of carbon nanotubes in large-scale and application feasibility of the grown tubes,”
A.K.M. Fazle Kibria, Md. Shajahan, Y.H. Mo, M.J. Kim, K.S. Nahm,
August 2003, Diamond and Related Materials 13, 1865-1872 (2004).

“High growth of SWNTs and MWNTs from C2H2 decomposition over Co-Mo/MgO catalysts,”
Md. Shajahan, Y.H. Mo, A.K.M. Fazle Kibria, M.J. Kim, and K.S. Nahm,
Carbon 42, 2245-2253 (2004).

“Nano-patterining and manipulation of genetically eingineered virus nanoblocks,”
M.J. Kim, M. in het Panhuis, R. Gupta, A.S. Blum, B.R. Ratna, B.E. Gnade and R.M. Wallace,
Microscopy Microanalysis 10 (Suppl. 2), 26-27 (2004).

“Growth mechanism of needle-shaped ZnO nanostructures over NiO-coated Si substrates,”
T.Y. Kim, S.H. Lee, Y.H. Mo, K.S. Nahm, J.Y. Kim, E.K. Suh, and M.J. Kim,
Korean J. Chem. Eng. 21, 733-738 (2004).

“Low temperature deposition of hafnium silicate gate dielectrics,”
P. Punchaipetch, G. Pant, M. Quevedo-Lopez, C. Yao, M. El-Bouanani, M.J. Kim, R.M. Wallace and B.E.Gnade,
IEEE Journal of Quantum Electronics 10, 89-100 (2004).

“Low Temperature UV/ozone oxidation formation of HfSiON gate dielectric,”
G. Pant, P. Punchaipetch, M.J. Kim, R.M. Wallace and B.E. Gnade,
Thin Solid Films 460, 242-246 (2004).

“Cowpea mosaic virus as a scaffold fro 3-D patterning of gold nanoparticles,”
A. Szuchmacher Blum, C.M. Soto, C.D. Wilson, J.D. Cole, M.J. Kim, B.E. Gnade, A. Chatterji, W.F. Cchoa, T. Lin, J.E. Johnson, and B.R. Ratna,
Nano Letters, 4, 867-870 (2004).

“35% Drive Current Improvement from Recessed-SiGe Drain Extensions on 37 nm Gate Length PMOS,”
P.R. Chidambaram, B.A. Smith, L.H. Hall, H. Bu, S. Chakravarthi, Y. Kim, A.V. Samoilov, A.T. Kim, P.J. Jones, R.B Irwin, M.J. Kim, A.L.P. Rotondaro, C. F. Machala, D.T. Grider,
VLSI Symp. 48-49 (2004).

“Deposition of Hf-silicate gate dielectric on SixGe1-x(100): detection of interfacial layer growth,”
S. Addepalli, P. Sivasubramani, M. El-Bouanani, M.J. Kim, B.E. Gnade, and R.M. Wallace,
September 2003, J. Vacuum Science and Technology A 22, 616-623 (2004).

“Growth and characterization of hafnium silicate films prepared by UV/ozone oxidation,”
P. Punchaipetch, G. Pant, M.J. Kim, R.M. Wallace and B.E. Gnade,
J. Vacuum Science and Technology A 22, 395-400 (2004).

“Fabrication of antenna-coupled transition edge polarization-sensitive bolometer arrays,”
M.H. Yun, J. Bock, H. Leduc, P. Day, M.J. Kim,
Nuclear Instruments and Methods in Physics Research A 520, 487-489 (2004).

2003

“Thermal stability of Hf-based high-k dielectric films on Si(100)”,
M.J. Kim, J. Huang, D.K. Cha, M.A. Quevedo-Lopez, R.M. Wallace, B.E. Gnade,
Microscopy Microanalysis, 9(Suppl 2) 506 (2003).

“HgCdTe on Si: Present status and novel buffer layer concepts,”
T.D. Golding, O.W. Holland, M.J. Kim, J.H. Dinan, L.A. Almeida, J.M. Arias, J. Bajaj, H.D. Shih, W.P. Kirk,
Journal of Electronic Materials, 32(8) 882 (2003).

“Heterogeneous silicon integration by ultra-high vacuum wafer bonding,”
M.J. Kim, R.W. Carpenter,
Journal of Electronic Materials, 32(8) 849 (2003).

“Effect of N incorporation on boron penetration from p+ polycrystalline-Si through HfSixOy films,”
M.A. Quevedo-Lopez, M. El-Bouanani, M.J. Kim, B.E. Gnade, R.M. Wallace, M.R. Visokay, a. LiFatou, J.J. Chambers, L. Colombo,
Applied Physics Letters, 82(26) 4669 (2003).

“Atomic Layer Chemical Vapor Deposition of ZrO2-based Dielectric Films: Nanostructure and Nanochemistry,”
S.K. Dey, C.-G. Wang, D. Tang, M.J. Kim, R.W. Carpenter, C. Werkhoven and E. Shero,
J. Appl. Phys. 93, 4144 (2003).

“Hafnium Silicate Formation by Ultra-violet/Ozone Oxidation of Hafnium Silicide,”
P. Punchaipetch, G. Pant, M. Quevedo-Lopez, H. Zhang, M. El-Bouanani, M.J. Kim, R.M. Wallace and B.E. Gnade,
Thin Solid Films 425, 68 (2003).

2002

“Phosphorus and Arsenic Penetration Studies through HfSixOy and HfSixOyNz Films”,
M.A. Quevedo-Lopez, M. El-Bouanani, M.J. Kim, B.E. Gnade, R.M. Wallace, M.R. Visokay, A. LiFatou, M.J. Bevan and L. Colombo,
Appl. Phys. Lett. 81, 1609 (2002).

“Boron Penetration Studies for p+ Polycrystalline Si through HfSixOy,”
M.A. Quevedo-Lopez, M. El-Bouanani, M.J. Kim, B.E. Gnade, R.M. Wallace, M.R. Visokay, A. LiFatou, M.J. Bevan and L. Colombo,
Appl. Phys. Lett. 81, 1074 (2002).

“Virus Nanoblocks for Molecular Electronics,”
M.J. Kim, A.S. Blum, B.E. Gnade and B.R. Ratna,
Microsc. Microanal. 8 (Suppl. 2), 1116CD (2002).

“Synthesis of Narrow-diameter Carbon Nanotubes from Acetylene Decomposition over an Iron-Nickel Catalyst supported on Alumina”,
A.K.M. Fazle Kibria, Y.H. Mo, K.S. Nahm and M.J. Kim,
Carbon 40, 1241 (2002).

“Interface Nanochemistry Effects on Stainless Steel Diffusion Bonding,”
M.J. Cox, M.J. Kim and R.W. Carpenter,
Metall. Mater. Trans. A33, 437 (2002).

2001

“Hetero-Nanointerfaces by Wafer Bonding,”
M.J. Kim, R.W. Carpenter and M.J. Cox,
Proc. 5th MCEM, Lecce, Italy, 335 (2001).

“Effects of Bimetallic Catalyst Composition and Growth Parameters on the Growth Density and Diameter of Carbon Nanotubes,”
A.K.M. Fazle Kibria, Y.H. Mo, M.H. Yun, M.J. Kim and K.S. Nahm,
Korean J. Chem. Eng. 18, 208 (2001).

2000

“Controlled Planar Interface Synthesis by UHV Diffusion Bonding/Deposition,”
M.J. Kim, R.W. Carpenter, M. Cox and J. Xu,
J. Mater. Res. 15, 1008 (2000).

“A TEM Study of Cr-based Contacts to (0001) 6H-SiC,”
R.-J. Liu, M.J. Kim, R.W. Carpenter, L.M. Porter, L.P. Scheunemann and R.F. Davis,
Microsc. Microanal. 6 (Suppl. 2), 1064 (2000).

“Silicon Wafer Bonding: Effect of Wafer Surface Treatment on Interface Structure and Chemistry,”
M.J. Cox, M.J. Kim, H. Xu and R.W. Carpenter,
Microsc. Microanal. 6 (Suppl. 2), 1074 (2000).

“Si/SiC UHV Direct Wafer Bonded Interface Structure,”
M.J. Kim, H. Xu, R.-J. Liu and R.W. Carpenter,
Mat. Res. Soc. Symp. 587(C), O4.2.1 (2000).