“A Novel Thermally-Stable Zirconium Amidinate ALD Precursor for ZrO2 Thin Films,” B. Lee, K.J. Choi, A. Hande, M.J. Kim, R.M. Wallace, J. Kim, Y. Senzaki, D. Shenai, H. Li, M. Rousseau and J. Suydam, Microelectronic Engr86, 272-276 (2009).

“Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozone,” B. Lee, T.J. Park, A. Hande, M.J. Kim, R.M. Wallace, J. Kim, X. Liu, J.H. Yi, H. Li, M. Rousseau, D. Shenai and J. Suydam, Microelectronic Engr. 86, 1658-1661 (2009).

“Physical Degradation of GaN HEMT Devices under High Drain Bias Reliability Testing,” S.Y. Park, C. Floresca, U. Chowdhury, J.L. Jimenes, C. Lee, E. Beam, P. Saunier, T. Balisteri and M.J. Kim,Microelectornic Reliability 49 (2009) 478-483 (2009).

“Characterization of Organic Thin Films using TEM and FTIR Spectroscopy,” U.S. Bhansali, M.A. Quevedo-Lopez, D. Cha, H. Jia, H.N. Alshareef, M.J. Kim and B.E. Gnade, Thin Solid Films 517, 5825-5829 (2009).

“HRTEM Observation of Mechanically Exfoliated Graphene from Natural Graphite and HOPG,” S.Y. Park, Y. Shu, H. Floresca and M.J. Kim, ECS Transactions on Graphene and Emerging Materials for Post-CMOS Applications19, 81-85 (2009).

“Materials Science of Graphene for Novel Device Applications,” G. Lee, C. Gong, Y. Chabal, J. Kim, E. Vogel, R.M. Wallace, M.J. Kim, L. Colombo and K.J. Cho, ECS Transactions on Graphene and Emerging Materials for Post-CMOS Applications19. 185-199 (2009).

“Atomic Layer Deposited Al2O3 ad Gate Dielectric for Graphene-based Devices,” B. Lee, G. Mordi, T. Park, K. Cho, E. Vogel, M.J. Kim, L. Colombo, R.M. Wallace and J. Kim, ECS Transactions on Graphene and Emerging Materials for Post-CMOS Applications,19, 225-230 (2009).

“Analysis of Hopping Conduction in Semiconducting and Metallic Carbon Nanotube Devices,” D.J. Perello, W.J. Yu, D.J. Bae, S.J. Chae, M.J. Kim, Y.H. Lee and M. Yun, J. Appl. Phys105, 124309 (2009). – Selected for the July 6, 2009 issue of Virtual Journal of Nanoscale Science and Technology.

“Interface Characterization of Nickel Contacts to Bulk Bismuth Tellurium Selenide,” O.D. Ioyre, T.H. Lee, R.P. Gupta, J.B. White, H.N. Alshareef, M.J. Kim and B.E. Gnade, Surf. Interface Anal41, 440-444 (2009).

“A Direct Observation on the Structure Evolution of Memory Switching Phenomena Using In-situ TEM,” D. Cha, S.J. Ahn, S.Y. Park, H. Horii, D.H. Kim, Y.K. Kim, S.O. Park, U. In Jung, M.J. Kim and J. Kim, VLSI Dig. Tech. 2009, 204-205 (2009).

“MEMS-based Mechanically Tunable Flexible Photonic Crystals,” Y.Cui, Qi Wu, W. Park, J.B. Jeon, M.J. Kim, and J.-B. Lee, The 15thInternational Conference on Solid-State Sensors, Actuators & Microsystems (Transducers 2009), 509-512 (2009).

“A Nevel Theramlly-Stable Zirconium Amidinate ALD Precursor for ZrO2 Thin Films,” B. Lee, K.J. Choi, A. Hande, M.J. Kim, R.M. Wallace, J. Kim, Y. Senzaki, D. Shenai, H. Li, M. Rousseau and J. Suydam, Microelectronic Engr86, 272-276 (2009).

“Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozone,” B. Lee, T.J. Park, A. Hande, M.J. Kim, R.M. Wallace, J. Kim, X. Liu, J.H. Yi, H. Li, M. Rousseau, D. Shenai and J. Suydam, Microelectronic Engr86, 1658-1661 (2009).

“Physical Degradation of GaN HEMT Devices under High Drain Bias Reliability Testing,” S.Y. Park, C. Floresca, U. Chowdhury, J.L. Jimenes, C. Lee, E. Beam, P. Saunier, T. Balisteri and M.J. Kim, Microelectornic Reliability 49 (2009) 478-483 (2009).

“Characterization of Organic Thin Films using TEM and FTIR Spectroscopy,” U.S. Bhansali, M.A. Quevedo-Lopez, D. Cha, H. Jia, H.N. Alshareef, M.J. Kim and B.E. Gnade, Thin Solid Films 517, 5825-5829 (2009).

“Analysis of Hopping Conduction in Semiconducting and Metallic Carbon Nanotube Devices,” D.J. Perello, W.J. Yu, D.J. Bae, S.J. Chae, M.J. Kim, Y.H. Lee and M. Yun, J. Appl. Phys105, 124309 (2009). - Selected for the July 6, 2009 issue of Virtual Journal of Nanoscale Science and Technology.

“Interface Characterization of Nickel Contacts to Bulk Bismuth Tellurium Selenide,” O.D. Ioyre, T.H. Lee, R.P. Gupta, J.B. White, H.N. Alshareef, M.J. Kim and B.E. Gnade, Surf. Interface Anal41, 440-444 (2009).

“A Direct Observation on the Structure Evolution of Memory Switching Phenomena Using In-situ TEM,” D. Cha, S.J. Ahn, S.Y. Park, H. Horii, D.H. Kim, Y.K. Kim, S.O. Park, U. In Jung, M.J. Kim and J. Kim, VLSI Dig. Tech. 2009, 204-205 (2009).

“HRTEM Study of Lithographically Defined Silicon Nanowires,” H.C. Floresca, K. Trivedi, S.J. Kang, W. Hu and M.J. Kim, Microsc. Microanal15(Suppl 2), 128-129 (2009).

“In-situ Observation and Characterization of Structural Evolution in a Phase-Change Memory Device by TEM-STM,” D. Cha, S.Y. Park, S.J. Ahn, H. Horii, D.K. Kim, Y.K. Kim, S.O. Park, U.I. Jung, M.J. Kim and J. Kim, Microsc. Microanal15(Suppl 2), 716-717 (2009).

“High Resolution TEM and Electron Diffraction Study of Graphene Layers,” Y.J. Suh, S.Y. Park and M.J. Kim, Microsc. Microanal15(Suppl 2), 1168-1169 (2009).

“Functionalization of a Single TiO2 Nanotube for Bio Sensor Applications,” D. Cha, M. Lee, H. Shin, M.J. Kim and J. Kim, Microsc. Microanal15(Suppl 2), 1180-1181 (2009).

“Anisotropic FCC Metal Nanostructures by Kinetically Controlled Synthesis,” J. Wang, Y. Xiong, B. Lim, Y. Xia and M.J. Kim, Microsc. Microanal15(Suppl 2), 1202-1203 (2009).

“Amorphous Structure and Stability of Mn Implanted GeC Ferromagnetic Semiconductor,” C. Sun, H.C. Floresca, J. Wang, M. Jamil, S. Guchhait, D.A. Ferrer, S.K. Barnerjee, G. Lian, L. Colombo and M.J. Kim, Microsc. Microanal15(Suppl 2), 1216-1217 (2009).

“HRTEM Observation of Mechanically Exfoliated Graphene from Natural Graphite and HOPG,” S.Y. Park, Y. Shu, H. Floresca and M.J. Kim, ECS Transactions on Graphene and Emerging Materials for Post-CMOS Applications19, 81-85 (2009).

“Materials Science of Graphene for Novel Device Applications,” G. Lee, C. Gong, Y. Chabal, J. Kim, E. Vogel, R.M. Wallace, M.J. Kim, L. Colombo and K.J. Cho, ECS Transactions on Graphene and Emerging Materials for Post-CMOS Applications19. 185-199 (2009).

“Atomic Layer Deposited Al2O3 ad Gate Dielectric for Graphene-based Devices,” B. Lee, G. Mordi, T. Park, K. Cho, E. Vogel, M.J. Kim, L. Colombo, R.M. Wallace and J. Kim, ECS Transactions on Graphene and Emerging Materials for Post-CMOS Applications19, 225-230 (2009).

“MEMS-based Mechanically Tunable Flexible Photonic Crystals,” Y. Cui, Qi Wu, W. Park, J.B. Jeon, M.J. Kim, and J.-B. Lee, The 15th International Conference on Solid-State Sensors, Actuators & Microsystems (Transducers 2009), 509-512 (2009).

“Poole-Frenkel emission and hopping conduction in semiconducting carbon nanotube transistor,” D. Perello, W. Yu, D.J. Bae, S.J. Chae, M.J. Kim, Y.H. Lee and M. Yun,, Proceedings of the SPIE – The International Society for Optical Engineering 2009, 7399, 739907 (2009).

“Twin-Induced Growth of Pd-Pt Alloy Nanocrystals,” B. Lim, J. Wang, P.H.C. Camargo, C.M. Cobley, M.J. Kim and Y. Xia, Angew. Chem48, 6304-6308 (2009).

“The Focused Ion Beam Fold-Out:  Sample Preparation Method for Transmission Electron Microscopy,” H.C. Floresca, J.B. Jeon, J.G. Wang and M.J. Kim, Microsc. Microanal15, 558-563 (2009).

“Control of Light Scattering Induced Shift in Photoluminescene from CdTe Quantum Dots Encapsulated in Poly-Acrylamide Gel Nanospheres,” A. Neogi, B. Garner, T. Cai, M.J. Kim and Z. Hu, Soft Materials 7, 232-241 (2009).

“Quantitative experimental analysis of Schottky barriers and Poole-Frenkel emission in carbon nanotube devices,” D. Perello, D.J. Bae, M.J. Kim, D.K. Cha, S.Y. Jeong, B.R. Kang, W.J. Yu, Y.H. Lee and M. Yun, IEEE Transactions on Nanotechnology 8(3). 355-360 (2009).

“Microstructure and superconductivity of Zn and Au-Sn junction nanowires,” J. Wang, M. Tian and M.J. Kim, J. Nanosci. Nanotech. 9, 946-950 (2009).

“Synthesis of isotopically-labeled graphite films by cold-wall chemical vapor deposition and electronic properties of graphene obtained from such films,” W. Cai, R.D. Piner, Y. Zhu, X. Li, Z. Tan, H.C. Floresca, C. Yang, L. Lu, M.J. Kim and R.S. Ruoff, Nano Research 2, 851-856 (2009).

“Light Scattering Induced Giand Red-Shift in Photoluminescence from CdTe Quantum Dots Encapsulated in Polyacrylamide Gel Nanospheres,” B. Garner, T. Cai, Z. Hu, M.J. Kim and A. Neogi, Appl. Phys. Exp. 2, 075001-1-3 (2009).

“Void-free filling of spin-on dielectric in 22 nm wide ultrahigh aspect ratio Si trenches,” K. Trivedi, H.C. Floresca, S. Kim, H. Kim, D. Kim, J. Kim, M.J. Kim and W. Hu, J. Vac. Sci. Tech. B 27 (6), 3145-3148 (2009).

“Role of heating on plasma-activated silicon wafers bonding,” M.M.R. Howlader, T. Suga, H. Itoh, T.H. Lee and M.J. Kim, J. Electrochem. Soc156(11), H846-851 (2009).

“Ultrathin SOI as a flatform for nanostructures”, H.C. Floresca, K. Trivedi, S.J. Kang, B.Y. Lee, W. Hu and M.J. Kim, Conference on Wafer Bonding for Microsystems and Wafer Level Integration 09, 115-116 (2009)

“Poly(3-hexylthiophene)-CdSe Quantum Dot Bulk Heterojunction Solar Cells: Influence of the Functional End-Group of the Polymer,” K. Palaniappan, J.W. Murphy, N. Khanam, J. Horvath, H. Alshareef, M.Quevedo-Lopez, M.C. Biewer, S.Y. Park, M.J. Kim, B.E. Gnade and M.C. Stefan, Macromolecules 42, 3845-3848 (2009).