“Systematic Gate Stack Optimization to Maximize Mobility with HfSiON EOT Scaling,”
M.A. Quevedo-Lopez, P.D. Kirsch, S. Krishnan, H.N. Alshareef, J. Barnett, R. Harris, A. Neugroschel, F.S. Aguirre-Tostado, B.E. Gnade, M.J. Kim, R.M. Wallace and B.H. Lee,
EDSSDRC 2006, Proc. 36th European Solid State Devices Research Conference, 113-116 (2006)

“Mobility and Charge Trapping Comparison for Crystalline and Amorphous HfON and HfSiON Gate Dielectrics,”
P. D. Kirsch, M. A. Quevedo-Lopez, S. A. Krishnan, B. H. Lee, G. Pant, M. J. Kim, R. M. Wallace, and  B. E. Gnade,
Applied Physics Letters 89, 242909 (2006).

“The Thermal Stability of Lanthanum Scandate Dielectrics on Si (100),”
P. Sivasubramani, T.H. Lee, M. J. Kim, J. Kim, B. E. Gnade, and R. M. Wallace, L. F. Edge and D. G. Schlom , F. A. Stevie, R. Garcia, Z. Zhu and D.P. Griffis,
Applied Physics Letters 89, 242907 (2006).

“Effect of Nitrogen Incorporation on the Thermal Stability of Sputter Deposited Lanthanum Aluminate Dielectrics on Si (100),”
P. Sivasubramani, J. Kim, M. J. Kim, B. E. Gnade and R. M. Wallace,
Applied Physics Letters 89, 152903 (2006).

“Deposition and Patterining of Diamond-like Carbon as Antiwear Nanoimprint Templates,”
S. Ramachandran, L. Tao, T.H. Lee, S. Sant, L.J. Overzet, M.J. Goeckner, M.J. Kim, G.S. Lee and W. Hu,
J. Vac. Sci. Tech. B24, 2993-2997 (2006).

“Micro-pinholes in Composite Coblat Nickel Silicides,”
O. Song, S.Y. Kim, J.B. Jeon and M.J. Kim,
Korean J. Mater. Res16(10), 1-7 (2006).

“Structure-Property relationships in ultrathin Hf-based gate dielectrics,”
M.A. Quevedo-Lopez, S. Krishnan, P.D. Kirsch, H.N. Alshareef, B.E. Gnade, M.J. Kim, B.H. Lee and R. Jammy,
Future FabIntl21, July 1 (2006).

“Sequential Plasma Activated Process for Silicon Direct Bonding,”
M.R. Howlader, H. Itoh, T. Suga and M.J. Kim,
ECS Trans3(6), 191-202 (2006).

“Si-based Resonant Tunneling Devices using UHV Wafer Bonding,”
M.J. Kim, T.H. Lee, J. Kim, R.M. Wallace and B.E. Gnade,
ECS Trans3(6), 75 (2006).

“In-situ nano fabrication and assembly by FIB/SEM with a nanomanipulator,”
J.B. Jeon, H.C. Floresca, J. Kim and M.J. Kim,
Inter. Microsc. Congress 16, 1115 (2006).

“Probing nanoscale local lattice strains in advanced Si CMOS devices,”
J. Huang, M.J. Kim, P.R. Chidambaram, R.B. Irwin, P.J. Jones, J.W. Weijtmans, E.M. Koontz, Y.G. Wang, S. Tang and R. Wise,
Appl. Phys. Lett89, 063114 (2006).

“Thermal stability of amorphous lanthanum scandium oxide thin film deposited on silicon by molecular-beam deposition,”
L.F. Edge, D.G. Schlom, S. Rivillon, Y.J. Chabal, M.P. Agustin, S. Stemmer, T.H. Lee, M.J. Kim, H.S. Craft, J-P. Maria, M.E. Hawley, B. Hollander, J. Schubert and K. Eisenbeiser,
Appl. Phys. Lett89, 062902 (2006).

“Analysis of Defects in HgCdTe and CdTe Epilayers on Si by Dual-Beam FIB,”
Taehun Lee, J. Huang, D.K. Cha, R.N. Jacobs, J.H. Dinan and M.J. Kim,
Microsc. Microanal12(Suppl. 2), 1274-1275CD (2006).

“Electrical characterization of a single TiO2 nanotube by using modified FIB/SEM,”
D.K. Cha, B. Lee, J. Huang, J. Kim, R.M. Walllace, B.E. Gnade and M.J. Kim,
Microsc. Microanal12(Suppl. 2), 1272-1273 (2006).

“Demonstration of pick and place assembly for scaled MEMS devices,”
J.B. Jeon, I. Gory, G. Skidmore, M.J. Kim and B.E. Gnade,
icrosc. Microanal12(Suppl. 2), 560-561CD (2006).

“A novel method for bonding of ionic wafers,”
M.R. Howlader, T. Suga, M.J. Kim, N. Itoh, J. Deen and P. Mascher,
IEEE 2006 Electronic Components and Technology Conference, 552-558 (2006).

“Probing Nanoscale Local Lattice Strains in Advanced Si CMOS Devices by CBED,”
M.J. Kim, J. Huang, P.R. Chidambaram, R. Irwin, P. Jones, J. Weijtmans, E. Koontz, Y. Wang, S. Tang and R. Wise
ECS Trans2, 541-547 (2006).

“Room temperature bonding of silicon and lithium niobate,”
M.M.R. Howlader, T. Suga and M.J. Kim,
Appl. Phys. Lett89, 031914 (2006).

“Comparison of electrical and chemical characteristics of ultrathin HfON versus HfSiON dielectrics,”
G. Pant, A. Gnade, M.J. Kim, R.M. Wallace, B.E. Gnade, M.A. Quevedo-Lopez, P.D. Kirsch, and S. Krishnan,
Appl. Phys. Lett89, 032904 (2006).

“Fabrication of Superconducting Transition Edge Sensor based on Mo and Au Bilayers,”
M. Yun, J. Bock, M. Keynon, C.-L. Kuo, H. Leduc, A. Turner and M.J. Kim,
Nuclear Instru. Methods Phys. Res., A 559, 462-464 (2006).

“Chemical synthesis of PEDOT nanotubes,”
X. Zhang, J.-S. Lee, G.S. Lee, D.K. Cha, M.J. Kim, D.J. Yang and S.K. Manohar,
Macromolecules 39, 470-472 (2006).

“Ni Diffusion Studies from Fully-Silicided NiSi into Si,”
P. Zhao, I. Trachtenberg, M.J. Kim, B.E. Gnade and R.M. Wallace,
Electrochem. Solid-State Lett9, G111-G113 (2006).

“Interaction of HfO2/SiO2/Si Structures with Deuterium Gas,”
C. Driemeir, L. Miotti, I.J.R. Baumvol, C. Radtke, E.P. Gusev, M.J. Kim and R.M. Wallace,
Appl. Phys. Lett88, 041918 (2006).

“Effect of Thickness on the Crystallization of Ultrathin HfSiON Gate Dielectrics,”
G. Pant, A. Gnade, M.J. Kim, R.M. Wallace, B.E. Gnade, M.A. Quevedo-Lopez and P.D. Kirsch,
Appl. Phys. Lett. 88, 032901 (2006).

“TiO2 nanofibers and core-shell structures prepared using mesoporous molecular sieves as templates,”
C. Xiong, M.J. Kim and K.J. Balkus, Jr.,
Small 2, 52-55 (2006).