“Interfacial Diffusion Studies of Cu/5 nm Ru/Si Structures – Physical Vapor Deposited vs. Electrochemically Deposited Cu,” T.N. Aruhagiri, Y.B. Zhang, O. Chyan, M.J. Kim and T.Q. Hurd, J. Electrochem. Soc. 152, G808-812 (2005).

“MoXSiYNZ Metal Gate Electrode with Tunable Work Function for Advanced CMOS,”
P. Zhao, J. Kim, M.J. Kim, B.E. Gnade, and R.M. Wallace,
International Conference on Solid State Devices and Materials, Kobe, Japan, A-8-1, pp 848-849 (2005).

“High performance gate first HfSiON dielectric satisfying 45nm node requirements,”
M.A. Quevedo-Lopez, S.A. Krishnan, P.D. Krisch, H.J. Li, J.H. Sim, C. Huffman, J.J. Perterson, B.H. Lee, G. Pant, B.E. Gnade, M.J. Kim, R.M. Wallace, D. Guo, H. Bu and T.P. Ma,
200t IEEE International Electron Devices Meeting (IEDM) Technical Digest, 437-440 (2005).

“Characterization of nanoscale local lattice strains in Si CMOS by convergent beam electron diffraction,”
J. Huang, D.K. Cha, P.R. Chidambaram, R.B. Irwin, P.J. Jones and M.J. Kim,
Microsc. Microanal. 11 (Suppl2), 2084-2085 (2005).

“In-situ electrical characterization of nano-interconnect structures in the FIB,”
D.K. Cha, Y. Ai, J. Huang, T. Zheng, R.M. Wallace, B.E. Gnade and M.J. Kim,
Microsc. Microanal. 11 (Suppl2), 818-819 (2005).

“5 nm ruthenium thin film as a directly plateable copper diffusion barrier,”
T.N. Arunagiri, Y. Zhang, O. Chyan, M. El-Bouanani, M.J. Kim, K.H. Chen, C.T. Wu and L.C. Chen,
Appl. Phys. Lett. 86, 083104 (2005).

“Outdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si (001),”
P. Sibasubramani, M.J. Kim, B.E. Gnade, R.M. Wallace, L.F. Edge, D.G. Schom, H.S. Craft and J.-P. Maria,
Appl. Phys. Lett. 86, 201901 (2005).

“Activation process and bonding mechanisms of Si/LiNbO3 and LiNbO3/LiNbO3 at room temperative,”
M.R. Howlader, T. Suga and M.J. Kim,
Electrochemical Sociery Proc. Vol. 2005-06, 319-325 (2005).

“Low temperature integration of CdZnTe(211)B/Si(100) by wafer bonding,”
J. Huang, D.K. Cha, A. Kaleczyc, J.H. Dinan, R.W. Carpenter and M.J. Kim,
Electrochemical Sociery Proc. Vol. 2005-06, 218-133 (2005).

“HRTEM for nano-electronic materials research,”
M.J. Kim, R.M. Wallace and B.E. Gnade,
Characterization and Metrology for ULSI Technology, AIP Conference Proc. 788, 558-564 (2005).

“Thermal stability studies of advanced gate stack structures on Si (100),”
P. Sivasubramani, P. Zhao, J. Kim, M.J. Kim, B.E. Gnade, R.M. Wallace, L.F. Edge, D.G. Scholm, G.N. Parsons and V. Misra,J
Characterization and Metrology for ULSI Technology, AIP Conference Proc. 788, 156-160 (2005).

“Thermally stable MoXSiYNZ as a metal gate electrode for advanced CMOS devices,”
P. Zhao, J. Kim, M.J. Kim, B.E. Gnade and R.M. Wallace,
Characterization and Metrology for ULSI Technology, AIP Conference Proc. 788, 152-155 (2005).

“Dopant penetration studies through Hf silicate,”
M. Quevedo-Lopez, MR. Visokay, J.J. Chambers, M.J. Bevam, A. LiFatou, L. Colombo, M.J. Kim, B.E. Gnade and R.M. Wallace,
J. Appl. Phys. 97, 043508 (2005).