“Thermal stability of Hf-based high-k dielectric films on Si(100)”,
M.J. Kim, J. Huang, D.K. Cha, M.A. Quevedo-Lopez, R.M. Wallace, B.E. Gnade,
Microscopy Microanalysis, 9(Suppl 2) 506 (2003).

“HgCdTe on Si: Present status and novel buffer layer concepts,”
T.D. Golding, O.W. Holland, M.J. Kim, J.H. Dinan, L.A. Almeida, J.M. Arias, J. Bajaj, H.D. Shih, W.P. Kirk,
Journal of Electronic Materials, 32(8) 882 (2003).

“Heterogeneous silicon integration by ultra-high vacuum wafer bonding,”
M.J. Kim, R.W. Carpenter,
Journal of Electronic Materials, 32(8) 849 (2003).

“Effect of N incorporation on boron penetration from p+ polycrystalline-Si through HfSixOy films,”
M.A. Quevedo-Lopez, M. El-Bouanani, M.J. Kim, B.E. Gnade, R.M. Wallace, M.R. Visokay, a. LiFatou, J.J. Chambers, L. Colombo,
Applied Physics Letters, 82(26) 4669 (2003).

“Atomic Layer Chemical Vapor Deposition of ZrO2-based Dielectric Films: Nanostructure and Nanochemistry,”
S.K. Dey, C.-G. Wang, D. Tang, M.J. Kim, R.W. Carpenter, C. Werkhoven and E. Shero,
J. Appl. Phys. 93, 4144 (2003).

“Hafnium Silicate Formation by Ultra-violet/Ozone Oxidation of Hafnium Silicide,”
P. Punchaipetch, G. Pant, M. Quevedo-Lopez, H. Zhang, M. El-Bouanani, M.J. Kim, R.M. Wallace and B.E. Gnade,
Thin Solid Films 425, 68 (2003).